Graphene Memory Based on a Tunable Nanometer-Thin Water Layer-Reference-Cited by-同舟云学术

Graphene Memory Based on a Tunable Nanometer-Thin Water Layer

Published:2019-04-03 Issue:17 Volume:123 Page:10842-10848
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Chiu U-Ting¹,Lee Bo-Fan¹,Hu Shu-Kai¹,Yu Ting-Feng²,Lee Wen-Ya²^ORCID,Chao Ling¹^ORCID

Affiliation:

1. Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan

2. Research and Development Center for Smart Textile Technology and Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 10608, Taiwan

Funder

Ministry of Science and Technology, Taiwan

National Taiwan University

Academia Sinica

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b10804

Reference42 articles.

1. Sakagami, E.; Arai, N.; Tsunoda, H.; Egawa, H.; Yamaguchi, Y.; Kamiya, E.; Takebuchi, M.; Yamada, K.; Yoshikawa, K.; Mori, S. The Impact of Intermetal Dielectric Layer and High Temperature Bake Test on the Reliability of Nonvolatile Memory Devices, Reliability Physics Symposium, 1994. 32nd Annual Proceedings; IEEE International; IEEE, 1994; pp 359–367.

2. Humidity effect on electrical performance of organic thin-film transistors

3. Electric Field Effect in Atomically Thin Carbon Films

4. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

5. Intrinsic and extrinsic performance limits of graphene devices on SiO2

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