Atomistic-Level Description of GaN/Water Interface by a Combined Spectroscopic and First-Principles Computational Approach-Reference-Cited by-同舟云学术

Atomistic-Level Description of GaN/Water Interface by a Combined Spectroscopic and First-Principles Computational Approach

Published:2020-05-18 Issue:23 Volume:124 Page:12466-12475
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Sato Masahiro¹^ORCID,Imazeki Yuki²^ORCID,Takeda Takahito²,Kobayashi Masaki²³,Yamamoto Susumu⁴^ORCID,Matsuda Iwao⁴^ORCID,Yoshinobu Jun⁴,Nakano Yoshiaki²⁵,Sugiyama Masakazu¹

Affiliation:

1. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-0032, Japan

2. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

3. Center for Spintronics Research Network, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

4. The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

5. Global Solar Plus Initiative, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Funder

Sumitomo Foundation

Japan Society for the Promotion of Science

Toyota Mobility Foundation

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c02192

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