Defect Pairs in Boron Nitrides That Exhibit Strong Electronic Transitions in the Infrared-Reference-Cited by-同舟云学术

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Defect Pairs in Boron Nitrides That Exhibit Strong Electronic Transitions in the Infrared

Published:2024-07-09 Issue:28 Volume:128 Page:11672-11678
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Lee Seungyeop¹^ORCID,Fortner Jacob²^ORCID,Wang YuHuang¹²³^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20770, United States

2. Chemical Physics Program, University of Maryland, College Park, Maryland 20770, United States

3. Maryland NanoCenter, University of Maryland, College Park, Maryland 20770, United States

Funder

Energy Frontier Research Centers

National Science Foundation

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.4c01586

Reference54 articles.

1. Boron Nitride Nanotubes and Nanosheets

2. Recent advances and perspective on boron nitride nanotubes: From synthesis to applications

3. Boron Nitrides — Properties, Synthesis and Applications

4. Theory of graphitic boron nitride nanotubes

5. Boron nitride nanotubes composed of four- and eight-membered rings

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