Sub-Bandgap Photoinduced Transient Absorption Features in CdSe Nanostructures: The Role of Trapped Holes-Reference-Cited by-同舟云学术

Sub-Bandgap Photoinduced Transient Absorption Features in CdSe Nanostructures: The Role of Trapped Holes

Author:

Jasrasaria Dipti¹^ORCID,Philbin John P.¹,Yan Chang¹²^ORCID,Weinberg Daniel¹²,Alivisatos A. Paul¹³⁴²^ORCID,Rabani Eran¹⁵²^ORCID

Affiliation:

1. Department of Chemistry, University of California, Berkeley, California 94720, United States

2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

3. Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States

4. Kavli Energy NanoScience Institute, Berkeley, California 94720, United States

5. The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 69978, Israel

Funder

Basic Energy Sciences

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference43 articles.

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