Manipulating the Thermal Conductivity of Monolayer MoS2 via Lattice Defect and Strain Engineering-Reference-Cited by-同舟云学术

Manipulating the Thermal Conductivity of Monolayer MoS2 via Lattice Defect and Strain Engineering

Published:2015-07-01 Issue:28 Volume:119 Page:16358-16365
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Ding Zhiwei¹,Pei Qing-Xiang¹,Jiang Jin-Wu²,Zhang Yong-Wei¹

Affiliation:

1. Institute of High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore 138632, Republic of Singapore

2. Shanghai Institute of Applied Mathematics and Mechanics, Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai University, Shanghai 200072, China

Funder

Central Committee of the Communist Party of China

Agency for Science, Technology and Research

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b03607

Reference69 articles.

1. Photoluminescence from Chemically Exfoliated MoS2

2. Emerging Photoluminescence in Monolayer MoS2

3. Stretching and Breaking of Ultrathin MoS2

4. Elastic Properties of Freely Suspended MoS2Nanosheets

5. MoS2 nanoresonators: intrinsically better than graphene?

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