Radiative and Non-Radiative Exciton Recombination Processes in a Chemical Vapor Deposition-Grown MoSe<sub>2</sub> Film-Reference-Cited by-同舟云学术

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Radiative and Non-Radiative Exciton Recombination Processes in a Chemical Vapor Deposition-Grown MoSe₂ Film

Published:2022-08-30 Issue:36 Volume:126 Page:15319-15326
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wang Jian¹²^ORCID,Huang Junhui¹²^ORCID,Li Yuanhe¹²,Ding Kun¹,Jiang Desheng¹,Dou Xiuming¹²^ORCID,Sun Baoquan¹²

Affiliation:

1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c04550

Reference54 articles.

1. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

2. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Electrical control of neutral and charged excitons in a monolayer semiconductor

5. Molybdenum diselenide (MoSe 2 ) for energy storage, catalysis, and optoelectronics

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