Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In–Ga–Zn–O Thin Films Using XAFS and High-Energy XRD-Reference-Cited by-同舟云学术

Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In–Ga–Zn–O Thin Films Using XAFS and High-Energy XRD

Published:2021-06-15 Issue:24 Volume:125 Page:13619-13628
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kumara Loku Singgappulige Rosantha¹²^ORCID,Ishikawa Kyohei³,Ide Keisuke³,Hosono Hideo³⁴⁵^ORCID,Kamiya Toshio³⁴⁵,Sakata Osami¹²⁵⁶^ORCID

Affiliation:

1. Synchrotron X-ray Station at SPring-8, Research Network and Facility Services Division, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo, Hyogo 679-5148, Japan

2. Center for Synchrotron Radiation Research, Japan Synchrotron Radiation Research Institute (JASRI), Kouto 1-1-1, Sayo, Hyogo 679-5198, Japan

3. Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

4. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

5. School of Materials and Chemical Technology, Department of Material Science and Engineering, Tokyo Institute of Technology, 4259-J3-16, Nagatsuta, Midori, Yokohama 226-8502, Japan

6. Synchrotron X-ray Group, Research Center for Advanced Measurement and Characterization, NIMS, Sayo, Hyogo 679-5148, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.1c02437

Reference44 articles.

1. Metal oxide semiconductor thin-film transistors for flexible electronics

2. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

3. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

4. High-mobility amorphous In2O3–10wt%ZnO thin film transistors

5. Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability

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