Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single- and Double-Molecule Spin Crossover Nanogap Devices-Reference-Cited by-同舟云学术

Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single- and Double-Molecule Spin Crossover Nanogap Devices

Author:

Gee Alex¹,Jaafar Ayoub H.¹²,Brachňaková Barbora³,Massey Jamie⁴,Marrows Christopher H.⁴,Šalitroš Ivan³⁵⁶^ORCID,Kemp N. T.¹^ORCID

Affiliation:

1. Department of Physics and Mathematics, University of Hull, Hull HU6 7RX, United Kingdom

2. Physics Department, College of Science, University of Baghdad, Baghdad 10071, Iraq

3. Department of Inorganic Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava, Slovakia

4. School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, United Kingdom

5. Central European Institute of Technology, Brno University of Technology, Purkyňova 123, 61200 Brno, Czech Republic

6. Department of Inorganic Chemistry, Faculty of Science, Palacký University, 17. Listopadu 12, 771 46 Olomouc, Czech Republic

Funder

Engineering and Physical Sciences Research Council

Grantov? Agentura Cesk? Republiky

Agent?ra na Podporu V?skumu a V?voja

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference40 articles.

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