Deposition-Temperature-Mediated Selective Phase Transition Mechanism of VO2 Films-Reference-Cited by-同舟云学术

Deposition-Temperature-Mediated Selective Phase Transition Mechanism of VO2 Films

Published:2020-07-09 Issue:31 Volume:124 Page:17282-17289
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Lee Dooyong¹²^ORCID,Yang Donghyuk¹,Kim Hyegyeong¹,Kim Jiwoong¹,Song Sehwan¹,Choi Kyoung Soon²,Bae Jong-Seong³,Lee Jouhahn²,Lee Jaekwang¹,Lee Yunsang⁴,Yan Jiafeng⁵,Kim Jaeyong⁵^ORCID,Park Sungkyun¹³^ORCID

Affiliation:

1. Department of Physics, Pusan National University, Busan 46241, Korea

2. Advanced Nano Surface Research Group, Korea Basic Science Institute, Daejeon 34133, Korea

3. Busan Center, Korea Basic Science Institute, Busan 46742, Korea

4. Department of Physics, Soongsil University, Seoul 06978, Korea

5. Department of Physics and Institute of High Pressure, Hanyang University, Seoul 04763, Korea

Funder

National Research Foundation of Korea

Korea Basic Science Institute

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c03038

Reference50 articles.

1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

2. Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in VO2 film near the metal-insulator transition region

3. VO2 multidomain heteroepitaxial growth and terahertz transmission modulation

4. Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide

5. Terahertz transmission characteristics across the phase transition in VO2 films deposited on Si, sapphire, and SiO2 substrates

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