Eu Sites in Eu-Doped AlON Phosphors: Anomalous Eu Occupancy Layers-Reference-Cited by-同舟云学术

Eu Sites in Eu-Doped AlON Phosphors: Anomalous Eu Occupancy Layers

Published:2019-01-11 Issue:5 Volume:123 Page:3110-3114
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wang Meng,Zhang Sheng-Hui,Zhu Qiang-Qiang¹,Zhang Zhong-Wei²,Zhang Li,Wang Xin,Zhang Lin-Bo,Zhao Yu-Jie³,Xu Xin⁴^ORCID,Yin Liang-Jun^ORCID

Affiliation:

1. Key Laboratory of Materials for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, Shanghai 201800, P. R. China

2. Laboratory of Energy Storage and New Energy Materials Technology, Central Research Institute, Dongfang Electric Corporation, Chengdu 611731, P. R. China

3. College of Materials, Xiamen University, Xiamen 361005, P. R. China

4. Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230022, P. R. China

Funder

Department of Science and Technology of Sichuan Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b11263

Reference31 articles.

1. Green Eu2+-doped Ba3Si6O12N2 phosphor for white light-emitting diodes: Synthesis, characterization and theoretical simulation

2. Synthesis of Ca-α-SiAlON phosphors by a mechanochemical activation route