Evolution of the Electronic Properties of ZrX2 (X = S, Se, or Te) Thin Films under Varying Thickness-Reference-Cited by-同舟云学术

Evolution of the Electronic Properties of ZrX2 (X = S, Se, or Te) Thin Films under Varying Thickness

Published:2021-01-04 Issue:1 Volume:125 Page:1134-1142
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Villaos Rovi Angelo B.¹,Cruzado Harvey N.¹,Dizon John Symon C.¹²,Maghirang Aniceto B.¹,Huang Zhi-Quan¹,Hsu Chia-Hsiu¹,Huang Shin-Ming¹,Lin Hsin³,Chuang Feng-Chuan¹⁴⁵^ORCID

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan

2. Institute of Mathematical Sciences and Physics, College of Arts and Sciences, University of the Philippines Los Baños, College, Laguna 4031 Philippines

3. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan

4. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

5. Physics Division, National Center for Theoretical Sciences, Hsinchu 30013, Taiwan

Funder

National Center for Theoretical Sciences

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c10085