Annealing-Induced Effects on the Chemical Structure of the In2S3/CuIn(S,Se)2 Thin-Film Solar Cell Interface-Reference-Cited by-同舟云学术

Annealing-Induced Effects on the Chemical Structure of the In2S3/CuIn(S,Se)2 Thin-Film Solar Cell Interface

Published:2015-05-04 Issue:19 Volume:119 Page:10412-10416
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Hauschild D.¹,Meyer F.¹,Benkert A.¹²,Kreikemeyer-Lorenzo D.²,Pohlner S.³,Palm J.³,Blum M.⁴,Yang W.⁵,Wilks R. G.⁶,Bär M.⁴⁶⁷,Heske C.²⁴⁸⁹,Weinhardt L.²⁴⁸⁹,Reinert F.¹¹⁰

Affiliation:

1. Experimental Physics VII, University of Würzburg, Am Hubland, 97074 Würzburg, Germany

2. Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

3. AVANCIS GmbH, Otto-Hahn-Ring 6, 81739 Munich, Germany

4. Department of Chemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003, United States

5. Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States

6. Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany

7. Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany

8. Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology (KIT), Engesserstraße 18/20, 76128 Karlsruhe, Germany

9. ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

10. Gemeinschaftslabor für Nanoanalytik, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe, Germany

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b01622

Reference27 articles.

1. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

2. Solar Frontier Sets Thin-Film PV World Record with 20.9% CIS Cellhttp://www.solar-frontier.com/eng/news/2014/C031367.html(accessed Feb 11, 2015) .

3. Solar cell efficiency tables (version 44)

4. ILGAR In2S3buffer layers for Cd-free Cu(In,Ga)(S,Se)2solar cells with certified efficiencies above 16%

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical and Electronic Structure at the Interface between a Sputter‐Deposited Zn(O,S) Buffer and a Cu(In,Ga)(S,Se)₂ Solar Cell Absorber;Solar RRL;2023-04-07

2. Stability of Cu2ZnSnSe4/CdS heterojunction based solar cells under soft post-deposition thermal treatments;Solar Energy Materials and Solar Cells;2023-01

3. Thermal Effect on the Electronic Properties of ZnO/CdS/CIGSeS Solar Cell at/near the Heterojunction Interfaces;ACS Applied Energy Materials;2022-09-03

4. A modeling study on utilizing In2S3 as a buffer layer in CIGS-based solar cells;Journal of Computational Electronics;2022-08-13

5. Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se₂ Solar Cell Absorbers;ACS Applied Materials & Interfaces;2022-07-18