Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators
Author:
Affiliation:
1. Department of Physics, University of Guelph, Guelph, Ontario N1G 1W2, Canada
2. Institute of Physics, University of São Paulo, São Paulo 05508-090, Brazil
3. National Institute for Space Research, São José dos Campos, São Paulo 12227-010, Brazil
Funder
Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico
Funda??o de Amparo ? Pesquisa do Estado de S?o Paulo
Natural Sciences and Engineering Research Council of Canada
Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.9b05377
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1. Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films
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4. Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
5. Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure
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