Planar Hall Effect Modified by the Evolution of Magnetic Domain States-Reference-Cited by-同舟云学术

Planar Hall Effect Modified by the Evolution of Magnetic Domain States

Published:2023-05-05 Issue:19 Volume:127 Page:9154-9163
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Jiang Ning¹²,An Hengbin¹,Bai Yulong¹^ORCID,Yang Bo¹,Zhao Shifeng¹^ORCID

Affiliation:

1. School of Physical Science and Technology and Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot 010021, P. R. China

2. School of Physics and Electronic Information, Inner Mongolia Normal University, Hohhot 010022, P. R. China

Funder

Research Program of Science and Technology at Universities of Inner Mongolia Autonomous Region

Natural Science Foundation of Inner Mongolia

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c01243

Reference28 articles.

1. Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

2. Origin of the Planar Hall Effect in NanocrystallineCo60Fe20B20

3. Highly compliant planar Hall effect sensor with sub 200 nT sensitivity

4. Current trends in planar Hall effect sensors: evolution, optimization, and applications

5. Planar Hall effect and anisotropic magnetoresistance in polar-polar interface of LaVO3-KTaO3 with strong spin-orbit coupling

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