Device Geometry Engineering for Controlling Organic Antiambipolar Transistor Properties-Reference-Cited by-同舟云学术

Device Geometry Engineering for Controlling Organic Antiambipolar Transistor Properties

Published:2018-03-02 Issue:12 Volume:122 Page:6943-6946
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kobashi Kazuyoshi¹²,Hayakawa Ryoma¹,Chikyow Toyohiro¹,Wakayama Yutaka¹²^ORCID

Affiliation:

1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0047, Japan

2. Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b00015

Reference26 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures

3. Large-signal microwave performance of GaN-based NDR diode oscillators

4. Tunneling-based SRAM

5. Negative transconductance and negative differential resistance in a grid‐gate modulation‐doped field‐effect transistor

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