Simultaneous Optical and Electrical Characterization of GaN Nanowire Arrays by Means of Vis-IR Spectroscopic Ellipsometry-Reference-Cited by-同舟云学术

Simultaneous Optical and Electrical Characterization of GaN Nanowire Arrays by Means of Vis-IR Spectroscopic Ellipsometry

Published:2019-12-27 Issue:2 Volume:124 Page:1535-1543
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Santos Antonio J.¹²^ORCID,Lacroix Bertrand¹²^ORCID,Blanco Eduardo²³,Hurand Simon⁴,Gómez Víctor J.⁵^ORCID,Paumier Fabien⁴,Girardeau Thierry⁴,Huffaker Diana L.⁵⁶,García Rafael¹²,Morales Francisco M.¹²^ORCID

Affiliation:

1. Department of Materials Science and Metallurgical Engineering and Inorganic Chemistry, Faculty of Sciences, University of Cádiz, 11510 Puerto Real, Cádiz, Spain

2. IMEYMAT: Institute of Research on Electron Microscopy and Materials, University of Cádiz, 11510 Puerto Real, Cádiz, Spain

3. Department of Condensed Matter Physics, Faculty of Sciences, University of Cádiz, 11510 Puerto Real, Cádiz, Spain

4. Institut Pprime, UPR 3346 CNRS-Université de Poitiers-ENSMA, SP2MI, 86962 Futuroscope-Chasseneuil, France

5. School of Engineering, Cardiff University, CF24 3AA Cardiff, United Kingdom

6. School of Physics and Astronomy, Cardiff University, CF24 3AA Cardiff, United Kingdom

Funder

Engineering Research Network Wales

Ministerio de Educaci?n y Cultura

Universidad de C?diz

R?gion Nouvelle-Aquitaine

Electron Microscopy and Materials Institute, University of C?diz

European Structural and Investment Funds

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.9b10556

Reference51 articles.

1. Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies

2. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

3. Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

4. GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements

5. Nanowire photonics

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