2D Mn2C6Se12 and Mn2C6S6Se6: Intrinsic Room-Temperature Dirac Spin Gapless Semiconductors and Perfect Spin Transport Properties-Reference-Cited by-同舟云学术

2D Mn2C6Se12 and Mn2C6S6Se6: Intrinsic Room-Temperature Dirac Spin Gapless Semiconductors and Perfect Spin Transport Properties

Published:2020-07-01 Issue:29 Volume:124 Page:16127-16135
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wu Xuming¹,Feng Yulin¹,Li Si²,Zhang Boqun³,Gao Guoying¹^ORCID

Affiliation:

1. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China

2. Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics, Hunan Normal University, Changsha 410081, China

3. Department of Physics and Astronomy, University of California, Irvine, California 92697-4575, United States

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c04786

Reference68 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. The electronic properties of graphene

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4. Recent Advances in Graphene-like 2D Materials for Spintronics Applications

5. Room-Temperature Ferromagnetism in Two-Dimensional Fe2Si Nanosheet with Enhanced Spin-Polarization Ratio

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