Unintended Deviation of Fermi Level from Band Edge in Fractal Silicon Nanostructures: Consequence of Dopants’ Zonal Depletion-Reference-Cited by-同舟云学术

Unintended Deviation of Fermi Level from Band Edge in Fractal Silicon Nanostructures: Consequence of Dopants’ Zonal Depletion

Author:

Tanwar Manushree¹,Pathak Devesh K.¹,Chaudhary Anjali¹^ORCID,Saxena Shailendra K.²^ORCID,Kumar Rajesh¹³^ORCID

Affiliation:

1. Materials and Device Laboratory, Discipline of Physics, Indian Institute of Technology Indore, Simrol, Indore 453552, India

2. Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada

3. Centre for Advanced Electronics, Indian Institute of Technology Indore, Simrol, Indore 453552, India

Funder

Council??of??Scientific and Industrial Research, India

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference51 articles.

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