Electronic Properties of van der Waals Heterostructure of Black Phosphorus and MoS2-Reference-Cited by-同舟云学术

Electronic Properties of van der Waals Heterostructure of Black Phosphorus and MoS2

Published:2018-03-15 Issue:12 Volume:122 Page:7027-7032
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Tang Kewei,Qi Weihong¹^ORCID,Li Yejun,Wang Tianran

Affiliation:

1. State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi’an 710072, Shanxi, P. R. China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b01476

Reference52 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Boron nitride substrates for high-quality graphene electronics

3. Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

4. Two-Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2Surface

5. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

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