Few-Layer Fe3(PO4)2·8H2O: Novel H-Bonded 2D Material and Its Abnormal Electronic Properties-Reference-Cited by-同舟云学术

Few-Layer Fe3(PO4)2·8H2O: Novel H-Bonded 2D Material and Its Abnormal Electronic Properties

Published:2016-11-15 Issue:46 Volume:120 Page:26278-26283
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Li Sibai¹,Quhe Ruge²³,Weng Mouyi¹,Feng Yancong¹,Zuo Yunxing¹,Xiao Weiji¹,Zheng Jiaxin¹,Lu Jing²,Pan Feng¹

Affiliation:

1. School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen518055, China

2. State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing100871, P. R. China

3. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications & School of Science, Beijing100876, China

Funder

Ministry of Science and Technology of the People's Republic of China

Guangdong Province

Shenzhen Municipality

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b07481

Reference42 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

3. Single-layer MoS2 transistors

4. Interfacial Properties of Monolayer MoSe2–Metal Contacts

5. Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices

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