Partial Hydrogenation of N-Heteropentacene upon Vacuum Deposition-Reference-Cited by-同舟云学术

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Partial Hydrogenation of N-Heteropentacene upon Vacuum Deposition

Published:2024-01-12 Issue:3 Volume:128 Page:1185-1192
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Ono Yutaro¹,Tsuruta Ryohei¹,Nobeyama Tomohiro¹^ORCID,Matsui Kazuki¹,Sasaki Masahiro¹,Tadokoro Makoto²³^ORCID,Nakayama Yasuo⁴³^ORCID,Yamada Yoichi¹^ORCID

Affiliation:

1. Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

2. Department of Chemistry, Faculty of Science, Tokyo University of Science, Kagurazaka 1-3, Shinjuku-ku, Tokyo 162-8601, Japan

3. Division of Colloid and Interface Science, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510, Japan

4. Department of Pure and Applied Chemistry, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510, Japan

Funder

Japan Society for the Promotion of Science

Tsugawa Motor Kenkyu Foundation

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c06995

Reference33 articles.

1. Ten Years of N-Heteropentacenes as Semiconductors for Organic Thin-Film Transistors

2. N-Heteroacenes

3. The larger N-heteroacenes

4. Interface Structures and Electronic States of Epitaxial Tetraazanaphthacene on Single-Crystal Pentacene

5. Influence of N-introduction in pentacene on the electronic structure and excited electronic states

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