Radical-Driven Silicon Surface Passivation by Benzoquinone– and Hydroquinone–Methanol and Photoinitiators-Reference-Cited by-同舟云学术

Radical-Driven Silicon Surface Passivation by Benzoquinone– and Hydroquinone–Methanol and Photoinitiators

Published:2017-09-26 Issue:39 Volume:121 Page:21364-21373
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Chen Meixi¹^ORCID,Hack James H.¹,Iyer Abhishek¹,Jones Kevin J.¹,Opila Robert L.¹

Affiliation:

1. Department of Chemistry and Biochemistry, ‡Department of Material Science and Engineering, §Department of Electrical and Computer Engineering, and ∥Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States

Funder

Office of Energy Efficiency and Renewable Energy

Division of Engineering Education and Centers

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.7b05686

Reference45 articles.

1. Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

2. Grant, N. E.; McIntosh, K. R.Surface Passivation Attained by Silicon Dioxide Grown at Low Temperature in Nitric Acid. 24th European Photovoltaic Solar Energy Conference. 2009; p922.

3. Electronic passivation of silicon surfaces by halogens

4. Monitoring and Optimization of Silicon Surface Quality

5. Opila, R. L.; Yang, D.; Kotulak, N.; Costello, L.; Chhabra, B.Mechanism of Electrical Passivation of Si Surfaces with Quinhydrone. 38th IEEE Photovoltaic Specialists Conference. 2011; pp2583–2587.

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