Toward High-Precision Control of Transformation Characteristics in VO2 through Dopant Modulation of Hysteresis
Author:
Affiliation:
1. Department of Materials Science, Texas A&M University, College Station 77843-3003, Texas United States
2. Department of Chemistry, Texas A&M University, College Station 77843-3255, Texas United States
Funder
Welch Foundation
Division of Graduate Education
Division of Materials Research
President?s Excellence Fund, Texas A&M University
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c04952
Reference48 articles.
1. Building Brain-Inspired Logic Circuits from Dynamically Switchable Transition-Metal Oxides
2. Energetics, electronic and optical properties of X (X = Si, Ge, Sn, Pb) doped VO2(M) from first-principles calculations
3. Significant changes in phase-transition hysteresis for Ti-doped VO2 films prepared by polymer-assisted deposition
4. Switching properties of V1 − xTixO2 thin films deposited from alkoxides
5. Elucidating the Influence of Local Structure Perturbations on the Metal–Insulator Transitions of V1–xMoxO2 Nanowires: Mechanistic Insights from an X-ray Absorption Spectroscopy Study
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