Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and Size Effects-Reference-Cited by-同舟云学术

Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and Size Effects

Published:2021-02-15 Issue:7 Volume:125 Page:4119-4132
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Irfan Iqra¹,Golovynskyi Sergii¹^ORCID,Bosi Matteo²^ORCID,Seravalli Luca²^ORCID,Yeshchenko Oleg A.³^ORCID,Xue Bin⁴^ORCID,Dong Dan¹,Lin Yan¹,Qiu Ran¹,Li Baikui¹,Qu Junle¹

Affiliation:

1. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060 Shenzhen, P. R. China

2. Institute of Materials for Electronics and Magnetism, IMEM-CNR, I-43124 Parma, Italy

3. Physics Department, Taras Shevchenko National University of Kyiv, 01601 Kyiv, Ukraine

4. Center for Advanced Material Diagnostic Technology, College of Engineering Physics, Shenzhen Technology University, 518118 Shenzhen, P. R. China

Funder

Science, Technology and Innovation Commission of Shenzhen Municipality

Ministry of Education and Science of Ukraine

National Natural Science Foundation of China

National Research Foundation of Ukraine

Shenzhen University Scientific Research Start-up Foundation

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c11421

Reference106 articles.

1. Continuous Wave Sum Frequency Generation and Imaging of Monolayer and Heterobilayer Two-Dimensional Semiconductors

2. Near-Field Surface Waves in Few-Layer MoS2

3. High mobility solution processed MoS2 thin film transistors

4. Black phosphorus quantum dot-based field-effect transistors with ambipolar characteristics

5. High-Performance 2D MoS2 Phototransistor for Photo Logic Gate and Image Sensor

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