Thickness-Dependent In-Plane Thermoelectric Properties of PtTe<sub>2</sub> with n-Type Conduction-Reference-Cited by-同舟云学术

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Thickness-Dependent In-Plane Thermoelectric Properties of PtTe₂ with n-Type Conduction

Published:2023-01-12 Issue:3 Volume:127 Page:1673-1679
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kim Si-Hoo¹,Kang Min-Sung¹,Choi Jae-Won¹,Cho Jung-Min¹^ORCID,Kim Yun-Ho¹,Park No-Won¹,Kim Gil-Sung¹^ORCID,Lee Sang-Kwon¹^ORCID

Affiliation:

1. Department of Physics, Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea

Funder

National Research Foundation of Korea

Chung-Ang University

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c07165

Reference40 articles.

1. 2D transition metal dichalcogenides

2. High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

3. The electronic structures of platinum dichalcogenides: PtS2, PtSe2and PtTe2

4. Multipurpose and Reusable Ultrathin Electronic Tattoos Based on PtSe2 and PtTe2

5. Two-Dimensional/Three-Dimensional Schottky Junction Photovoltaic Devices Realized by the Direct CVD Growth of vdW 2D PtSe2 Layers on Silicon

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1. Terahertz emission from spin to charge conversion in type-II dirac semimetal PtTe2/ferromagnet heterostructure;Results in Physics;2024-04

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