Electrical Transport Properties and Band Structure of CuInSe2 under High Pressure-Reference-Cited by-同舟云学术

Electrical Transport Properties and Band Structure of CuInSe2 under High Pressure

Author:

Ye Meiyan¹,Tang Ruilian²³,Ma Shuailing³,Tao Qiang¹,Wang Xin¹,Li Yan¹^ORCID,Zhu Pinwen¹^ORCID

Affiliation:

1. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China

2. School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China

3. Center for High Pressure Science and Technology Advanced Research (HPSTAR), Changchun 130012, China

Funder

People's Government of Jilin Province

National Natural Science Foundation of China

State Key Laboratory of Superhard Materials, Jilin University

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference42 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献