Band-Gap Energy and Electronic d–d Transitions of NiWO4 Studied under High-Pressure Conditions

Author:

Errandonea Daniel1ORCID,Rodriguez Fernando2,Vilaplana Rosario3ORCID,Vie David4,Garg Siddhi5ORCID,Nayak Bishnupriya5,Garg Nandini56,Singh Jaspreet7,Kanchana Venkatakrishnan7ORCID,Vaitheeswaran Ganapathy8ORCID

Affiliation:

1. Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, Carrer del Dr. Moliner 50, Burjassot, 46100 Valencia, Spain

2. DCITIMAC, MALTA Consolider Team, Facultad de Ciencias, Universidad de Cantabria, 39005 Santander, Spain

3. Centro de Tecnologías Físicas, Universitat Politècnica de València, 46022 Valencia, Spain

4. Institut de Ciència dels Materials de la Universitat de València, Apartado de Correos 2085, E-46071 València, Spain

5. High-Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India

6. Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India

7. Department of Physics, Indian Institute of Technology Hyderabad, Kandi, 502284 Sangareddy, Telangana, India

8. School of Physics, University of Hyderabad, Prof. C. R. Rao Road, Gachibowli, Hyderabad 500 046 Telangana, India

Funder

Ministerio de Ciencia e Innovaci?n

Conselleria de Innovaci?n, Universidades, Ciencia y Sociedad Digital, Generalitat Valenciana

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

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