Electric-Field-Induced Depolarization of Si–C Bond Leads to a Strongly Reduced Barrier for Alkyl-Hopping on Si(001)-Reference-Cited by-同舟云学术

Electric-Field-Induced Depolarization of Si–C Bond Leads to a Strongly Reduced Barrier for Alkyl-Hopping on Si(001)

Published:2020-02-06 Issue:9 Volume:124 Page:5270-5274
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Bohamud Tamam¹,Reutzel Marcel¹,Adamkiewicz Alexa¹,Höfer Ulrich¹,Dürr Michael²^ORCID

Affiliation:

1. Fachbereich Physik and Zentrum für Materialwissenschaften, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany

2. Institut für Angewandte Physik and Zentrum für Materialforschung, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c00656

Reference32 articles.

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2. SCANNING TUNNELING MICROSCOPY MANIPULATION OF COMPLEX ORGANIC MOLECULES ON SOLID SURFACES

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4. Quantum engineering at the silicon surface using dangling bonds

5. Action spectroscopy for single-molecule reactions – Experiments and theory

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