Charge Transport in 2D MoS2, WS2, and MoS2–WS2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity
Author:
Affiliation:
1. Department of Physics, Indian Institute of Technology Delhi, Delhi 110016, India
2. Department of Sustainable Energy Technology, SINTEF INDUSTRY, Oslo, 7034, Norway
Funder
Norges Forskningsr?d
Indian Institute of Technology Delhi
Council for Scientific and Industrial Research
Department of Science and Technology (DST), India
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c05651
Reference61 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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5. Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics
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