Interfacial Energetics of Silicon in Contact with 11 M NH4F(aq), Buffered HF(aq), 27 M HF(aq), and 18 M H2SO4
Author:
Affiliation:
1. Beckman Institute and Kavli Nanoscience Institute, Division of Chemistry and Chemical Engineering, 210 Noyes Laboratory, 127-72, California Institute of Technology, Pasadena, California 91125
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp074971d
Reference60 articles.
1. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
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3. Effects of Interfacial Energetics on the Effective Surface Recombination Velocity of Si/Liquid Contacts
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