Influence of the Oxygen Substoichiometry and of the Hydrogen Incorporation on the Electronic Band Structure of Amorphous Tungsten Oxide Films-Reference-Cited by-同舟云学术

Influence of the Oxygen Substoichiometry and of the Hydrogen Incorporation on the Electronic Band Structure of Amorphous Tungsten Oxide Films

Published:2014-06-05 Issue:24 Volume:118 Page:12632-12641
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Vasilopoulou Maria¹,Kostis Ioannis¹²,Vourdas Nikolaos¹,Papadimitropoulos Giorgos¹,Douvas Antonios¹,Boukos Nikolaos¹,Kennou Stella²,Davazoglou Dimitris¹

Affiliation:

1. Institute of Nanoscience and Nanotechnology, NCSR “Demokritos”, 153 10 Agia Paraskevi, Attiki, Greece

2. Department of Electronics, Technological and Educational Institute of Pireaus, 12244 Aegaleo, Greece

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp502092h

Reference65 articles.

1. Further refinement of the structure of WO3

2. The orthorhombic phase of WO3

3. Gasochromic windows

4. Low Pressure Chemically Vapor Deposited WO 3 Thin Films for Integrated Gas Sensor Applications

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