Influence of the Oxygen Substoichiometry and of the Hydrogen Incorporation on the Electronic Band Structure of Amorphous Tungsten Oxide Films
Author:
Affiliation:
1. Institute of Nanoscience and Nanotechnology, NCSR “Demokritos”, 153 10 Agia Paraskevi, Attiki, Greece
2. Department of Electronics, Technological and Educational Institute of Pireaus, 12244 Aegaleo, Greece
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp502092h
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