Reactive Species Generated during Wet Chemical Etching of Silicon in HF/HNO3 Mixtures-Reference-Cited by-同舟云学术

Reactive Species Generated during Wet Chemical Etching of Silicon in HF/HNO3 Mixtures

Published:2006-05-20 Issue:23 Volume:110 Page:11377-11382
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Steinert Marco¹,Acker Jörg¹,Krause Matthias¹,Oswald Steffen¹,Wetzig Klaus¹

Affiliation:

1. Leibniz Institute for Solid State and Material Research Dresden (IFW Dresden), P.O. Box 270116, D-01171 Dresden, Germany

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0608168

Reference37 articles.

1. Silicon Etching in HNO[sub 3]/HF Solution: Charge Balance for the Oxidation Reaction

2. Tool, C. J. J.; Coletti, G.; Granek, F. J.; Hoornstra, J.; Koppes, M.; Kossen, E. J.; Riffe, H. C.; Romijn, I. G.; Weeber, A. W.Proceedings ofthe. 20thEPVSEC, Barcelona, 2005, p 578.

3. Einhaus, R.; Vazsonyi, E.; Duerinckx, F.; Horzel, J.; Van Kerschaver, E.; Szlufcik, J.; Nijs, J.; Mertens, R.Proceedings of the 26thIEEE PVSPC,Anaheim, 1997, p 167.

4. Chemical Etching of Silicon

5. Chemical Etching of Silicon

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