Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories-Reference-Cited by-同舟云学术

Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Published:2012-05-22 Issue:11 Volume:24 Page:2099-2110
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Eom Taeyong¹,Choi Seol¹,Choi Byung Joon¹,Lee Min Hwan²,Gwon Taehong¹,Rha Sang Ho¹,Lee Woongkyu¹,Kim Moo-Sung³,Xiao Manchao⁴,Buchanan Iain⁴,Cho Deok-Yong⁵,Hwang Cheol Seong¹

Affiliation:

1. WCU Hybrid Material Program, Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea

2. Mechanical Engineering, School of Engineering, University of California, Merced, California 95343, United States

3. Air Products Korea, 15 Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do, 446-920, Republic of Korea

4. Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011, United States

5. IWE2 & JARA-FIT, RWTH Aachen University, 52056 Aachen, Germany

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm300539a

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5. Sadeghipour, S. M.; Pileggi, L.; Asheghi, M.InThe Tenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronics Systems, 2006. ITHERM ’06;San Diego, CA, May 30–June 2, 2006;IEEE:New York, 2006; pp660–665.

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