Effects of Morphology and Doping on the Electronic and Structural Properties of Hydrogenated Silicon Nanowires-Reference-Cited by-同舟云学术

Effects of Morphology and Doping on the Electronic and Structural Properties of Hydrogenated Silicon Nanowires

Published:2006-04-07 Issue:5 Volume:6 Page:920-925
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Singh Abhishek Kumar¹,Kumar Vijay¹,Note Ryunosuke¹,Kawazoe Yoshiyuki¹

Affiliation:

1. Institute for Materials Research, Tohoku University, Aoba-ku, Sendai 980-8577, Japan, Research Institute for Computational Sciences (RICS), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, Umezono 1-1-1, Tsukuba 305-8568, Japan, and Dr. Vijay Kumar Foundation, 45 Bazaar Street, K. K. Nagar (West), Chennai 600 078, India

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl052505z

Reference29 articles.

1. Small-Diameter Silicon Nanowire Surfaces

2. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

3. Control of Thickness and Orientation of Solution-Grown Silicon Nanowires

4. Diameter-Dependent Growth Direction of Epitaxial Silicon Nanowires

5. Controlled Growth and Structures of Molecular-Scale Silicon Nanowires

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