Mass and Electron Balance for the Oxidation of Silicon during the Wet Chemical Etching in HF/HNO3 Mixtures-Reference-Cited by-同舟云学术

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Mass and Electron Balance for the Oxidation of Silicon during the Wet Chemical Etching in HF/HNO3 Mixtures

Published:2012-09-13 Issue:38 Volume:116 Page:20380-20388
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Acker Jörg¹,Rietig Anja¹,Steinert Marco²,Hoffmann Volker³

Affiliation:

1. Faculty of Natural Sciences, Department of Chemistry, Lausitz University of Applied Sciences, Großenhainer Straße 57, D-01968 Senftenberg, Germany

2. GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co., KG Wilschdorfer Landstraße 101, 01109 Dresden, Germany

3. Leibniz Institute for Solid State and Materials Research Dresden, IFW Dresden e.V., Helmholtzstraße 20, 01069 Dresden, Germany

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp305621h

Reference31 articles.

1. Chemical Etching of Silicon

2. Chemical Etching of Silicon

3. Chemical Etching of Silicon

4. Chemical Etching of Silicon: IV . Etching Technology

5. On the Mechanism of Chemically Etching Germanium and Silicon

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