Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors-Reference-Cited by-同舟云学术

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Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors

Published:2012-09-11 Issue:10 Volume:12 Page:5331-5336
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhao Yanjie¹,Candebat Drew²³,Delker Collin²³,Zi Yunlong¹,Janes David²³,Appenzeller Joerg²³,Yang Chen¹⁴

Affiliation:

1. Department of Physics, Purdue University, West Lafayette, Indiana 47907, United States

2. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States

3. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States

4. Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl302684s

Reference34 articles.

1. Toward Nanowire Electronics

2. Functional Nanowires

3. A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III–V nanowires

4. Quantum Transport: Atom to Transistor

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