Efficiencies of Electron Injection from Excited N3 Dye into Nanocrystalline Semiconductor (ZrO2, TiO2, ZnO, Nb2O5, SnO2, In2O3) Films-Reference-Cited by-同舟云学术

Efficiencies of Electron Injection from Excited N3 Dye into Nanocrystalline Semiconductor (ZrO2, TiO2, ZnO, Nb2O5, SnO2, In2O3) Films

Published:2004-03-23 Issue:15 Volume:108 Page:4818-4822
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Katoh Ryuzi¹,Furube Akihiro¹,Yoshihara Toshitada¹,Hara Kohjiro¹,Fujihashi Gaku¹,Takano Shingo¹,Murata Shigeo¹,Arakawa Hironori¹,Tachiya M.¹

Affiliation:

1. Photoreaction Control Research Center (PCRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, Tsukuba, Ibaraki 305-8565, Japan, and Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi, Funabashi, Chiba 274-8601, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp031260g

Reference26 articles.

1. Conversion of light to electricity by cis-X2bis(2,2'-bipyridyl-4,4'-dicarboxylate)ruthenium(II) charge-transfer sensitizers (X = Cl-, Br-, I-, CN-, and SCN-) on nanocrystalline titanium dioxide electrodes

2. Light-Induced Redox Reactions in Nanocrystalline Systems

3. Photoelectrochemical Properties of a Porous Nb2O5 Electrode Sensitized by a Ruthenium Dye

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