Nitrogen-Doped Graphene for High-Performance Ultracapacitors and the Importance of Nitrogen-Doped Sites at Basal Planes-Reference-Cited by-同舟云学术

Nitrogen-Doped Graphene for High-Performance Ultracapacitors and the Importance of Nitrogen-Doped Sites at Basal Planes

Published:2011-05-19 Issue:6 Volume:11 Page:2472-2477
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Jeong Hyung Mo¹,Lee Jung Woo¹,Shin Weon Ho¹,Choi Yoon Jeong¹,Shin Hyun Joon²,Kang Jeung Ku¹³,Choi Jang Wook³

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science & Technology, 373-1, Guseong Dong, Yuseong Gu, Daejeon 305-701, Republic of Korea

2. Pohang Accelerator Laboratory and Department of Physics, Pohang University of Science and Technology, San 31, Hyojadong, Pohang 790-784, Republic of Korea

3. NanoCentury KAIST Institute and Graduate School of EEWS (WCU), Korea Advanced Institute of Science & Technology, 373-1, Guseong Dong, Yuseong Gu, Daejeon 305-701, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl2009058

Reference45 articles.

1. Electrochemical Supercapacitors

2. Materials for electrochemical capacitors

3. Principles and applications of electrochemical capacitors

4. Anomalous Increase in Carbon Capacitance at Pore Sizes Less Than 1 Nanometer

5. Origin of the Large N 1s Binding Energy in X-ray Photoelectron Spectra of Calcined Carbonaceous Materials

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