Diffusion and Reactions of Photoinduced Interstitial Oxygen Atoms in Amorphous SiO2 Impregnated with 18O-Labeled Interstitial Oxygen Molecules-Reference-Cited by-同舟云学术

Diffusion and Reactions of Photoinduced Interstitial Oxygen Atoms in Amorphous SiO2 Impregnated with 18O-Labeled Interstitial Oxygen Molecules

Published:2014-02-17 Issue:8 Volume:118 Page:4282-4286
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kajihara Koichi¹,Skuja Linards²,Hosono Hideo³

Affiliation:

1. Department of Applied Chemistry, Graduate School of Urban Environmental Sciences, Tokyo Metropolitan University, 1-1 minami-Osawa, Hachioji 192-0397, Japan

2. Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, LV1063 Riga, Latvia

3. Materials and Structures Laboratory & Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp412606a

Reference33 articles.

1. Low-Temperature Oxidation of Silicon in Dry O2Ambient by UV-Irradiation

2. Reactions and diffusion of atomic and molecular oxygen in theSiO2network

3. The behavior of interstitial oxygen atoms induced by F2 laser irradiation of oxygen-rich glassy SiO2

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