Preparation of Nanosized ZnS-Passivated CdS Particle Films via the MOCVD Process with Co-fed Single Source Precursors
Author:
Affiliation:
1. Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30043, Republic of China
Publisher
American Chemical Society (ACS)
Subject
Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/la0347410
Reference34 articles.
1. Growth of epitaxial and highly oriented thin films of cadmium and cadmium zinc sulfide by low-pressure metalorganic chemical vapour deposition using diethyldithiocarbamates
2. Preparation of zinc sulfide thin films by ultrasonic spray pyrolsis from bis(diethyldithiocarbamato) zinc(II)
3. Properties of cadmium sulphide films grown by single-source metalorganic chemical vapour deposition with dithiocarbamate precursors
4. Synthesis, characterization and x-ray crystal structures of asymmetric bis(dialkyldithiocarbamates) of zinc: Potential precursors for ZnS deposition
5. Thin films of CdTe/CdS grown by MOCVD for photovoltaics
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