Integrating Band Engineering and the Flexoelectric Effect Induced by a Composition Gradient for High Photocurrent Density in Bismuth Ferrite Films-Reference-Cited by-同舟云学术

Integrating Band Engineering and the Flexoelectric Effect Induced by a Composition Gradient for High Photocurrent Density in Bismuth Ferrite Films

Published:2021-10-13 Issue:42 Volume:13 Page:49850-49859
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sun Zehao¹,Wei Jie¹^ORCID,Yang Tiantian¹,Li Yunpeng¹,Liu Zhiting¹,Chen Guogang¹,Wang Tiangang²,Sun Hai²,Cheng Zhenxiang³

Affiliation:

1. Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, P. R. China

2. Lanzhou Institute of Physics, Lanzhou 730000, P. R. China

3. Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Innovation Campus, Squires Way, North Wollongong, NSW 2500, Australia

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c13305

Reference45 articles.

1. Ferroelectric materials for solar energy conversion: photoferroics revisited

2. Photovoltaic mechanisms in ferroelectric thin films with the effects of the electrodes and interfaces

3. Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO 3