δ-SnS: An Emerging Bidirectional Auxetic Direct Semiconductor with Desirable Carrier Mobility and High-Performance Catalytic Behavior toward the Water-Splitting Reaction-Reference-Cited by-同舟云学术

δ-SnS: An Emerging Bidirectional Auxetic Direct Semiconductor with Desirable Carrier Mobility and High-Performance Catalytic Behavior toward the Water-Splitting Reaction

Published:2021-07-01 Issue:27 Volume:13 Page:31934-31946
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Qiang¹^ORCID,Wang Xian¹,Yang Shali¹

Affiliation:

1. College of Science, University of Shanghai for Science and Technology, Shanghai 200093, P. R. China

Funder

Foundation of Henan Educational Committee

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c03650

Reference74 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. 2D transition metal dichalcogenide nanomaterials: advances, opportunities, and challenges in multi-functional polymer nanocomposites

3. Black phosphorus field-effect transistors

4. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

5. Phosphorene as a Superior Gas Sensor: Selective Adsorption and Distinct I–V Response

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