Tunable Infrared Plasmonic Properties of Epitaxial Ti1–xMgxN(001) Layers-Reference-Cited by-同舟云学术

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Tunable Infrared Plasmonic Properties of Epitaxial Ti1–xMgxN(001) Layers

Published:2021-05-05 Issue:19 Volume:13 Page:22738-22748
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Baiwei¹^ORCID,Nawarat Poomirat²,Lewis Kim Michelle²³^ORCID,Patsalas Panos⁴^ORCID,Gall Daniel¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States

2. Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States

3. Department of Physics and Astronomy, Howard University, Washington, DC 20059, United States

4. Department of Physics, Aristotle University of Thessaloniki, Thessaloniki GR-54124, Greece

Funder

Division of Civil, Mechanical and Manufacturing Innovation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c03667

Reference69 articles.

1. Tailoring of surface plasmon resonances in TiN/(Al0.72Sc0.28)N multilayers by dielectric layer thickness variation

2. Plasmonic Materials

3. Plasmonic properties of refractory titanium nitride

4. Optical Properties and Plasmonic Performance of Titanium Nitride

5. Near-Zero Negative Real Permittivity in Far Ultraviolet: Extending Plasmonics and Photonics with B1-MoNx

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2. Plasmonic semiconductors: materials, tunability and applications;Progress in Materials Science;2023-09

3. Bulk Synthesis and Transport Properties of Rocksalt-Type Ti_1–xMg_xN Solid Solution;Inorganic Chemistry;2023-04-06

4. Photocatalytic applicability of HfN and tuning it with Mg and Sc alloys: A DFT and molecular dynamic survey;Physica B: Condensed Matter;2023-01

5. Alloying of monolayer Zirconium Nitride with Magnesium and investigating its thermoelectric properties using DFT calculations;Solid State Communications;2022-02

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