Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation-Reference-Cited by-同舟云学术

Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation

Published:2021-05-20 Issue:21 Volume:13 Page:25280-25289
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yamada Yuki¹,Zhang Yan²,Ikeno Hidekazu³^ORCID,Shinokita Keisuke²^ORCID,Yoshimura Takeshi¹^ORCID,Ashida Atsushi¹,Fujimura Norifumi¹,Matsuda Kazunari²,Kiriya Daisuke¹⁴^ORCID

Affiliation:

1. Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan

2. Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan

3. Department of Materials Science, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan

4. PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Saitama Japan

Funder

Konica Minolta Imaging Science Foundation

Sumitomo Foundation

Precursory Research for Embryonic Science and Technology

Japan Society for the Promotion of Science

Research Foundation for Opto-Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c04980

Reference52 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Intrinsic valley Hall transport in atomically thin MoS2

4. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

5. Electrical control of neutral and charged excitons in a monolayer semiconductor

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