Enhanced Photodetection Performance of Photodetectors Based on Indium-Doped Tin Disulfide Few Layers-Reference-Cited by-同舟云学术

Enhanced Photodetection Performance of Photodetectors Based on Indium-Doped Tin Disulfide Few Layers

Published:2021-07-20 Issue:30 Volume:13 Page:35889-35896
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Fan Chao¹²³^ORCID,Liu Zhe¹³,Yuan Shuo¹³,Meng Xiancheng¹³,An Xia¹³,Jing Yongkai¹³,Sun Chun¹³^ORCID,Zhang Yonghui¹³,Zhang Zihui¹³^ORCID,Wang Mengjun¹²³,Zheng Hongxing¹³,Li Erping²

Affiliation:

1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China

2. Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications, Hangzhou 310027, China

3. Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

open project of Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications

State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c06305

Reference45 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

3. Photosensitive Graphene Transistors

4. Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

5. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

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