Spin Hall Magnetoresistance Effect from a Disordered Interface-Reference-Cited by-同舟云学术

Spin Hall Magnetoresistance Effect from a Disordered Interface

Published:2022-02-04 Issue:6 Volume:14 Page:8598-8604
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Catalano Sara¹^ORCID,Gomez-Perez Juan M.¹,Aguilar-Pujol M. Xochitl¹,Chuvilin Andrey¹²,Gobbi Marco¹²³^ORCID,Hueso Luis E.¹²^ORCID,Casanova Fèlix¹²^ORCID

Affiliation:

1. CIC nanoGUNE, Donostia-San Sebastián, Basque Country 20018, Spain

2. IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country 48009, Spain

3. Centro de Física de Materiales CFM-MPC (CSIC-UPV/EHU), Donostia-San Sebastian, Basque Country 20018, Spain

Funder

???la Caixa??? Foundation

European Commission

Agencia Estatal de Investigaci??n, Ministerio de Ciencia, Innovaci??n y Universidades

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c23411

Reference50 articles.

1. Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

2. Theory of spin Hall magnetoresistance

3. Antiferromagnet-controlled spin current transport inSrMnO3/Pthybrids

4. Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO

5. Evolution of the spin hall magnetoresistance in Cr2O3/Pt bilayers close to the Néel temperature

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