Strain-Induced Alternating Photoluminescence Segmentation in Hexagonal Monolayer Tungsten Disulfide Grown by Physical Vapor Deposition-Reference-Cited by-同舟云学术

Strain-Induced Alternating Photoluminescence Segmentation in Hexagonal Monolayer Tungsten Disulfide Grown by Physical Vapor Deposition

Published:2021-09-17 Issue:38 Volume:13 Page:46164-46170
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yang Xi¹^ORCID,Zhu Zhihong¹^ORCID,Luo Fang¹,Wang Guang²^ORCID,Peng Gang²,Zhu Mengjian¹^ORCID,Qin Shiqiao¹

Affiliation:

1. College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China

2. College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c13096

Reference39 articles.

1. Synthetic WSe 2 monolayers with high photoluminescence quantum yield