Chemical Composition Control at the Substrate Interface as the Key for FeSe Thin-Film Growth

Author:

Obata Yukiko1ORCID,Sato Michiko2,Kondo Yuji2,Yamaguchi Yuta3,Karateev Igor A.4,Pavlov Ivan5,Vasiliev Alexander L.456,Haindl Silvia1ORCID

Affiliation:

1. Tokyo Tech World Research Hub Initiative (WRHI), Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan

2. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan

3. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan

4. National Research Centre ″Kurchatov Institute,″ pl. Akademika Kurchatova 1, Moscow 123182, Russian Federation

5. Shubnikov Institute of Crystallography of FSRC “Crystallography and Photonics” Russian Academy of Sciences, Leninsky pr. 59, Moscow 119333, Russian Federation

6. Moscow Institute of Physics and Technology, National Research University, Dolgoprudny, Moscow region 141701, Russian Federation

Funder

Ministry of Education, Culture, Sports, Science and Technology

WRHI Tokyo Tech

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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