Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties-Reference-Cited by-同舟云学术

Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties

Published:2021-12-23 Issue:1 Volume:14 Page:1290-1303
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kaiser Nico¹^ORCID,Vogel Tobias¹,Zintler Alexander²,Petzold Stefan¹,Arzumanov Alexey¹,Piros Eszter¹,Eilhardt Robert²,Molina-Luna Leopoldo²,Alff Lambert¹

Affiliation:

1. Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany

2. Advanced Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany

Funder

Bundesministerium f??r Bildung und Forschung

Deutscher Akademischer Austauschdienst

Deutsche Forschungsgemeinschaft

Horizon 2020 Framework Programme

Electronic Components and Systems for European Leadership

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c09451

Reference70 articles.

1. Optical characterization of HfO2 thin films grown by atomic layer deposition

2. Dielectric constant and current transport for HfO2 thin films on ITO

3. High-K materials and metal gates for CMOS applications

4. Electrochemical Oxidation of Hf-Nb Alloys as a Valuable Route to Prepare Mixed Oxides of Tailored Dielectric Properties

5. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

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