Zinc Oxide Nanowire As an Electron-Extraction Layer for Broadband Polymer Photodetectors with an Inverted Device Structure-Reference-Cited by-同舟云学术

Zinc Oxide Nanowire As an Electron-Extraction Layer for Broadband Polymer Photodetectors with an Inverted Device Structure

Published:2012-06-14 Issue:25 Volume:116 Page:13650-13653
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Yang Tingbin¹,Sun Ke²,Liu Xilan¹,Wei Wei²,Yu Tianzhi¹,Gong Xiong¹,Wang Deli²,Cao Yong³

Affiliation:

1. Department of Polymer Engineering, College of Polymer Science and Polymer Engineering, University of Akron, Akron, Ohio 44325, United States

2. Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093, United States

3. State Key Laboratory of Luminescence Physics and Chemistry, South China University of Technology, Wushan Road, Tianhe District, Guangzhou, 510641, P. R. China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp303016f

Reference23 articles.

1. Hadziioannow, G. and Malliaras, G. G.Semiconducting Polymers;Wiley-VCH:Weinheim, Germany, 2007; pp421–729.

2. Heeger, A. J., Sariciftchi, N. S., and Namdas, E. B.Semiconducting and Metallic Polymers;Oxford University Press:Oxford, U.K., 2010; pp29–35.

3. Ultrasensitive solution-cast quantum dot photodetectors

4. Infrared Quantum Dots

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